Double-Gate MOSFET Technology for OFDM RF Power Amplifier Design
| Dublin Core | PKP Metadata Items | Metadata for this Document | |
| 1. | Title | Title of document | Double-Gate MOSFET Technology for OFDM RF Power Amplifier Design |
| 2. | Creator | Author's name, affiliation, country | Nancy Wadie Riad |
| 2. | Creator | Author's name, affiliation, country | A.E. Elhennawy |
| 2. | Creator | Author's name, affiliation, country | Nabil A. Rabou |
| 2. | Creator | Author's name, affiliation, country | H. El-Shenawy |
| 3. | Subject | Discipline(s) | |
| 3. | Subject | Keyword(s) | OFDM, PAPR CMOS, DG SOI MOSFET, PA, 1dB Compression Point. |
| 3. | Subject | Subject classification | Computer Science |
| 4. | Description | Abstract | Power Amplifiers (PA) nonlinearities affect drastically the performance of Orthogonal Frequency Division Multiplexing (OFDM) systems. It requires very linear transmission because of high peak to average power ratio (PAPR). It is thus important that the intrinsic PA linearity be made as high as possible. In our design, it is shown that the gate-source capacitance of a MOSFET device is a major source of nonlinearity that can limit the performance of a CMOS class-AB power amplifier, so the DG-SOI MOSFET which improves the gate-source capacitance, and increase linearity of RF PA, and decreases PAPR problem. Performance, tunability and efficiency of double gate MOSFET (DG-MOSFET) based PA are investigated. Specifically, we propose a RF PA topologies with 0.13 um DG-CMOSFET technology and study its performance via computer simulations with cadence. The PA is a two stage amplifier the driver stage is two common-source connected transistors act as a differential pair and an active load formed by the current mirror generates the single-ended the output stage is cascode configuration .Important design considerations include output power ,compression point and linearity. The amplifier has a 1dB compression point of 16 dBm (output referred) and 5.2 dBm (input referred).For power gain, a 12.7 dB value is achieved. We also provide a comparison of the simulated performance figures of merit for the DG-MOSFET amplifiers with those reported for the conventional bulk CMOS based PAs with the same design, which shows that proposed designs are either comparable or better than the standard CMOS counterparts in all figures of merits considered. |
| 5. | Publisher | Organizing agency, location | |
| 6. | Contributor | Sponsor(s) | |
| 7. | Date | (YYYY-MM-DD) | 2013-12-22 |
| 8. | Type | Status & genre | Peer-reviewed Article |
| 8. | Type | Type | |
| 9. | Format | File format | |
| 10. | Identifier | Uniform Resource Identifier | https://www.ciitresearch.org/dl/index.php/wc/article/view/WC122013005 |
| 11. | Source | Title; vol., no. (year) | Wireless Communication; Vol 5, No 12 (2013) |
| 12. | Language | English=en | English |
| 13. | Relation | Supp. Files | |
| 14. | Coverage | Geo-spatial location, chronological period, research sample (gender, age, etc.) | |
| 15. | Rights | Copyright and permissions | Copy Right: Each manuscript must be accompanied by a statement that it has been neither published nor submitted for publication, in whole or in part, either in a serial, professional journal or as a part in a book which is formally published and made available to the public. For the mutual benefit and protection of authors and publishers it is necessary that authors provide formal written consent to publish and transfer of copyright Copyright Form. before publication of the work. |