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A Survey on Error Detection Mechanism based on Embedded High-Speed BCH Encoder & Decoder for Multi-Level Cell (MLC) NAND Flash Memory

Saeideh Nabipour

Abstract


With reducing in geometry of semiconductor cell and transistor size, NAND flash memories face many serious issues in yield, reliability, and endurance and demands more and more powerful Error Correction Codes (ECC). One of the most common error correction codes in commercial NAND flash memory is Bose-Chaudhuri- Hocqunghem (BCH) code. This paper proposed the review of design and implementation of an optimized Bose-Chaudhuri_ hocquenghem hardware using parallel structure on the flash memory controller. The simulation results show that the proposed method is superior to conventional method in terms of execution times.


Keywords


NAND Flash Memory, Error Correction, BCH Codes, BCH Encoder, BCH Decoder.

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