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A Survey on Carbon Nanotube Field Effect Transistors

Vagisha ., Sayika Dey, Shivangi Sahay, N. Mathan

Abstract


The system on chip design will integrate millions of transistors on one chip, whereas packaging and cooling only have a limited ability to remove the excess heat. CMOS devices are scaling down to nano ranges resulting in increased process variations and short channel effects which not only affect the reliability of the device but also performance expectations. With the advent of portable and high efficient microelectronic devices, the power dissipation of VLSI circuits is becoming a critical concern. Accurate and efficient power estimation during the design phase is required in order to meet the power specifications without a costly redesign process. Carbon nanotube field effect transistor (CNTFET) is a very promising and superior technology for its applications to circuit design. In this paper, an extensive survey on CNTFET are depicted which will make the future, a valuable successor in the field of electronics.

Keywords


CNTFET, Ballistic CNTFET, Schottky Barrier, Top Gated CNTFET.

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