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CNTFET based SR Flip Flop

V. Saravanan, V. Kannan

Abstract


Carbon Nanotube Field Effect Transistors (CNTFET) are new nano-scaled devices to replace the MOSFET in nano-scale range to provide high performance, very dense and low power circuits. Small size of the MOSFET, below a few tens of nanometres creates the low Trans-conductance, gate oxide leakage, low ON-current, Mobility degradation and increased delay. Problems observed in the MOSFET when size is reduced are avoided in CNTFET, In case of CNTFET carbon nanotube is used as channel and high-k material is used as gate dielectric. In this paper, we present the simulation results of semi-conducting Carbon Nanotube Field Effect Transistors based logic gates and SR Flip Flop. The simulation is done using HSPICE and the current conduction of CNTFET is also analysed

Keywords


Carbon Nanotube, CNTFET, NAND Gate, SR Flip Flop

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References


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