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Inverted InAlAs/InGaAs MOSHEMT with Nanoscale Gate Length for Terahertz Applications
Abstract
A 650nm gate-length device exhibited a high drive current at low Vds, with an ultra-low on-resistance. A high peak effective mobility is also going to extracted, indicating excellent electron transport properties. Selectively regrown n++ In0.53Ga0.47As source/drain by MOCVD was incorporated in inverted-type InAlAs/InGaAs MOSHEMTs on GaAs substrates. The thermal stability of the inverted epitaxial HEMT structure after source/drain regrowth was investigated using Van der Pauw Hall measurements.
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References
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