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Simulation of Nanoscale INSB Based HEMT Device for Low Power and High Frequency Applications
Abstract
Indium antimonide nanoparticles were synthesized at room temperature. X-ray diffraction measurements are utilized to characterize the nanocomposites. The InSb nanoparticles has an average particle size in a range of 47mmto 99mm which is observed using the XRD result. He InSb is a material which is used to design the transistor. For designing purpose the simulator TCAD is used, by which the HEMT device is structured and its performance is analyzed and it is found that transistor operates as normal devices. Designed device is more valuable since a nanocomposite InSb material is used as a channel in HEMT device, thereby leading to the nanosized HEMT device. In addition, InSb has the property of high saturation velocity and mobility which results in higher performance of the device than any other materials in III-V compounds.
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References
T. D. Subash, T. Gnanasekaran, C. Divya, and J. Jagannathan “Design and Simulated Characteristics of Nanosized InSb Based Heterostructure Devices” Volume 2014, Article ID 196732, 5 pages.
T. Chiang, “A novel short-channel model for threshold voltage of trigate MOSFETs with localized trapped charges,” IEEE Transactions on Device and Materials Reliability, vol.12, no.2, pp.311–316, 2012.
J. Conde, A. Cerdeira, M. Pavanello, V. Kilchytska, and D.Flandre, “3D simulation of triple-gate MOSFETs with different mobility regions, ”Microelectronic Engineering,vol.88,no.7,pp.1633–1636, 2011.
K. Takei, S. Chuang, H. Fang et al., “Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness,” Applied Physics Letters, vol.99, no.10, Article ID 103507, 2011.
K.Kumar and S. Jabaraj, “Nand gate using FinFET for nanoscale technology,” Journal of Engineering Science and Technology, vol.2, no. 5, pp. 1351–1358, 2010.
R. J. Baker, CMOS: Circuit Design, Layout, and Simulation, Wiley-IEEE, 3rd edition, 2010.
K. Ko, J. Seo, D. Kim et al., “he growth of a low defect InAs HEMT structure on Si by using an AlGaSb buffer layer containing InSb quantum dots for dislocation termination, ”Nanotechnology, vol. 20, no. 22, Article ID 225201, 2009.
G. Ira and V. Mehrotra, “Synthesis of magnetic, dielectric or phosphorescent NANO composites,” U.S. Patent 7,431,862, 2008.
H.Zhou, R.Tian, M.Yeetal., “Highly specific enrichment of phosphopeptides by zirconium dioxide nanoparticles for phosphoproteome analysis,” Electrophoresis,vol.28,no.13,pp.2201–2215, 2007.
D.-H.Kimand J.A.delAlamo, “Beyond CMOS: logic suitability of In0.7Ga0.3As HEMT,” in Proceedings of the International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH ’06), pp. 251–254, Vancouver, BC, Canada, April 2006.
D.-H. Kim, J. A. del Alamo, J.-H. Lee and K.-S. Seo, “Performance evaluation of 50 nm In/sub 0.7/Ga/sub 0.3/As HEMTs for beyond-CMOS logic applications,” in Proceedings of the IEEE International Electron Devices Meeting (IEDM ’05), pp.767–770, Washington, DC, USA, 2005.
S. Liu, Z. Dai, H. Chen, and H. Ju, “Immobilization of hemoglobin on zirconium dioxide nanoparticles for preparation of a novel hydrogen peroxide biosensor,” Biosensors and Bioelectronics, vol.19, no.9, pp.963–969, 2004.
K.Roy and K.S.Yeo, Low Voltage, Low Power VLSI Subsystems, McGraw-Hill Professional, 2004.
H. Uchiyama, T. Taniguchi, and M. Kudo, “Suppression of plasma induced Fluorine damage in P-HEMTs using strained InSb barrier,” IEICE Electronics Express, vol.1, no.16, pp.513–517, 2004.
C. S. S. R. Kumar, M. Aphasia, H. Morrow et al., “Synthesis and characterization of S-Au interaction in gold nanoparticle bound polymeric beads,” Journal of Nanoparticle Research,vol.6, no. 4, pp. 369–376, 2004.
W.S.Lau, L.Zhong, A.Leeetal., “Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy,” Applied Physics Letters,vol.71,no.4,pp.500–502,1997.
S.T.Myers, J.E.Baker, A.C.S.Readhead, E.M.Leitch, and T.Herbig, “Measurements of the sunyaev-zeldovich effect in the nearby clusters A478, A2142, and A2256,” Astrophysical Journal Letters, vol.485, no.1, pp.1–21, 1997.
M. Levinshtein, M. S. Michael, and S. Rumyanstev, Handbook Series on Semiconductor Parameters, vol. 2, World Scientific, Singapore, 1996.
C.Hilsum, “Simple empirical relationship between mobility and carrier concentration,” Electronics Letters, vol.10, no.13, pp.259–321.
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